Technology of InP-based 1.55-μm ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers

Author

Umbach, Andreas ; Engel, Thomas ; Bach, Heinz-Gunter ; Van Waasen, Stefan ; Dröge, Elmar ; Strittmatter, André ; Ebert, Wilhelm ; Passenberg, Wolfgang ; Steingrüber, Rolf ; Schlaak, Wolfgang ; Mekonnen, Gebre G. ; Unterbörsch, Günter ; Bimberg, Dieter

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

35

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1024

Lastpage

1031

Abstract

For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mobile access systems using 38- or 60-GHz carrier frequencies, ultrafast photoreceivers have to be provided. Therefore, an integration concept for InP-based optoelectronic microwave monolithic integrated circuits for the 1.55-μm wavelength regime is demonstrated, which allows independent optimization of the constituting devices. Two different types of photodetectors (PDs), a waveguide-integrated PIN photodiode (PD) and a top-illuminated metal-semiconductor-metal PD, both having bandwidths of up to 70 GHz, have been developed. These are fabricated together with different amplifier designs employing high electron mobility transistors which exhibit transit frequencies of up to 90 GHz. The application to a 40-Gbit/s broadband photoreceiver for high-bit-rate time-division multiplexing systems is reported, as well as the application to 38- and 60-GHz narrow-band photoreceivers for use as optic/millimeterwave converters in mobile communication systems

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; broadband networks; indium compounds; integrated optoelectronics; mobile communication; optical receivers; optimisation; photodetectors; photodiodes; time division multiplexing; 1.55 mum; 38 GHz; 40 Gbit/s; 60 GHz; GHz carrier frequencies; GHz narrow-band photoreceivers; Gbit/s broad-band photoreceivers; Gbit/s broadband photoreceiver; InP; InP-based 1.55-μm ultrafast OEMMIC; InP-based optoelectronic microwave monolithic integrated circuits; PIN photodiode; amplifier designs; broad-band mobile access systems; high electron mobility transistors; high-bit-rate time-division multiplexing systems; independent optimization; long-haul communication systems; mobile communication systems; optic/millimeterwave converters; photodetectors; top-illuminated metal-semiconductor-metal PD; ultrafast photoreceivers; waveguide-integrated PIN PD; Bandwidth; Bit rate; Broadband amplifiers; Frequency; Integrated circuit technology; Microwave devices; Monolithic integrated circuits; Optical waveguides; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.772171

Filename

772171