Design and performance of an octave band 11 watt power amplifier MMIC

Author

Komiak, James J.

Author_Institution

General Electric Co., Syracuse, NY, USA

Volume

38

Issue

12

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2001

Lastpage

2006

Abstract

The design and performance of a two-stage 3.0 to 6.0 GHz MMIC (monolithic microwave integrated circuit) power amplifier that has established a new standard for power output and bandwidth in MMIC form are reported. The amplifier produces 11 W±1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at S and C radar bands respectively, and a minimum power of 9 W. This benchmark eclipses the best power levels reported for both two-stage (8 W at S-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this two-stage 40 mm gate periphery MMIC, based on 0.5 μm gate length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer

Keywords

MMIC; field effect integrated circuits; linear integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; wideband amplifiers; 0.5 micron; 3 to 6 GHz; 8 to 13.5 W; C-band; MMIC; S-band; monolithic microwave integrated circuit; octave band; power amplifier; radar bands; selective-implant MESFET technology; Bandwidth; MESFETs; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Power amplifiers; Radar; Semiconductor optical amplifiers; Wideband;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.64586

Filename

64586