Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFETs

Author

Chen, T.P. ; Chan, R. ; Fung, S. ; Lo, K.F.

Author_Institution

Dept. of Phys., Hong Kong Univ., Hong Kong

Volume

48

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

721

Lastpage

723

Abstract

Reproducibility of transmission line (TL) measurement of bipolar current-voltage (I-V) characteristics of grounded gate MOSFET´s has been examined. It is observed that the reproducibility is related to the duration of the pulses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult to reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions)

Keywords

MOSFET; characteristics measurement; electrostatic discharge; semiconductor device measurement; MOSFET; bipolar I-V characteristics; electrostatic discharge; grounded gate; high current pulses; pretriggering region; pulse duration; reproducibility; snapback region; transmission line measurement; triggering region; Biological system modeling; Current measurement; Electrostatic discharge; MOSFET circuits; Pulse generation; Pulse measurements; Reproducibility of results; Transmission line measurements; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.772206

Filename

772206