Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Author

Charbonnier, Matthieu ; Leroux, Charles ; Cosnier, V. ; Besson, P. ; Martinez, E. ; Benedetto, N. ; Licitra, Christophe ; Rochat, Névine ; Gaumer, C. ; Kaja, K. ; Ghibaudo, Gérard ; Martin, François ; Reimbold, Gilles

Author_Institution

LETI/Minatec, CEA, Grenoble, France

Volume

57

Issue

8

fYear

2010

Firstpage

1809

Lastpage

1819

Abstract

We study the effective metal gate work function (WF_Meff) of different metal/high-κ gate stacks. Both capacitance versus voltage measurement and internal photo emission measurement were used, leading to a better understanding of the WF_Meff variations. We demonstrate that these variations are related to two main process dependent parameters, a voltage drop at the high- κ/SiO₂ interface and the metal work function. These two parameters are studied for various process conditions.

Keywords

capacitance measurement; photoemission; silicon compounds; voltage measurement; SiO₂; capacitance measurement; capacitance versus voltage analysis; fabrication process; internal photo emission measurement; voltage measurement; Annealing; Capacitance measurement; Fabrication; Helium; Inorganic materials; Leakage current; MOSFETs; Photoelectricity; Voltage fluctuations; Voltage measurement; Capacitance versus voltage (CV); dipole; high- $kappa$; internal photo emission (IPE); work function;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2050957

Filename

5497126