Millimeter-wave generation and digital modulation in an InGaAs-InP heterojunction phototransistor: model and experimental characterization of dynamics and noise

Author

Bilenca, Alberto ; Lasri, Jacob ; Sheinman, Benny ; Eisenstein, Gadi ; Ritter, Dan

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

19

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1340

Lastpage

1351

Abstract

This paper describes the use of an InGaAs-InP photoheterojunction bipolar transistor (photo-HBT) for millimeter-wave generation and digital modulation. Optical mixing of two coherent signals generates the carrier, and a digital drive signal to the base is used for the modulation. We describe an advanced large signal model of the photo-HBT that takes into account distributed effects at high frequencies and all noise sources, including optical amplifier noise and noise correlations due to the high operation frequency and the nonlinear mixing processes. The model enables one to predict carrier-to-noise ratio dependence on frequency, optical power, and the transistor operating point. Frequency- and time-domain responses of the modulated millimeter- wave carrier and bit error rates are also calculated. Experiments at 10 and 45 GHz with modulation rates ranging between 50 Mb/s and 2.5 Gb/s were performed, and a superb fit to the calculated responses is found

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave photonics; millimetre wave amplifiers; millimetre wave generation; modulation; multiwave mixing; optical modulation; phototransistors; semiconductor device noise; 10 GHz; 2.5 MHz; 45 GHz; 50 Mbit/s; InGaAs-InP; InGaAs-InP heterojunction phototransistor; bit error rates; carrier-to-noise ratio dependence; coherent signals; digital drive signal; digital modulation; distributed effects; dynamics; frequency-domain responses; millimeter-wave generation; modulated millimeter- wave carrier; noise correlations; nonlinear mixing; optical amplifier noise; optical mixing; optical power; photo-HBT; photoheterojunction bipolar transistor; time-domain responses; transistor operating point; Bipolar transistors; Digital modulation; Frequency; Millimeter wave transistors; Nonlinear optics; Optical mixing; Optical modulation; Optical noise; Signal generators; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.948282

Filename

948282