DocumentCode
1526515
Title
Effect of saturation caused by amplified spontaneous emission on semiconductor optical amplifier performance
Author
Liu, Tiegen ; Obermann, K. ; Petermann, K. ; Girardin, F. ; Guekos, G.
Author_Institution
Dept. Electr. Eng., Tech. Univ. Berlin
Volume
33
Issue
24
fYear
1997
fDate
11/20/1997 12:00:00 AM
Firstpage
2042
Lastpage
2043
Abstract
The authors have investigated theoretically the effect of amplified spontaneous emission (ASE) on the spatial distribution of the carrier density. Measures of the semiconductor optical amplifier (SOA) performance, such as gain, saturation power and noise figure are derived. It is shown that the saturation due to the ASE strongly affects the SOA performance for device lengths >500 μm. The results are compared with experimental data and found to be in good agreement
Keywords
carrier density; optical noise; optical saturation; semiconductor lasers; superradiance; 500 micron; amplified spontaneous emission; carrier density; gain; noise figure; saturation power; semiconductor optical amplifier; spatial distribution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971356
Filename
648458
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