Growth of biaxially aligned buffer layers for YBCO tapes by ion-beam assisted laser deposition and in situ RHEED texture analysis

Biaxially oriented yttria-stabilized zirconia (YSZ) buffer layers were grown at room temperature by Pulsed Laser Deposition (PLD) and ion-Beam Assisted Laser Deposition (IBALD) on amorphous substrates. Dependent on deposition parameters, IBALD grown films showed in-plane orientations of up to 20° FWHM (full-width at half maximum). Film in-plane alignment increases with film thickness. Film growth at room temperature without assisting ion-beam was polycrystalline with a growth-rate dependent preferred orientation. (011)- and (001)- oriented films were obtained for growth rates of 10 Å/s and 14 Å/s, respectively. YSZ film growth orientation was monitored in situ with reflection high-energy electron diffraction. A quantitative analysis of the in-plane orientation of the IBALD grown YSZ film surfaces was established