DocumentCode
152707
Title
Carrier multiplication in bulk silicon investigated by terahertz spectroscopy
Author
Yamashita, G. ; Matsubara, Eiichi ; Nagai, Masaharu ; Kanemitsu, Yoshihiko ; Ashida, M.
Author_Institution
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
fYear
2014
fDate
14-19 Sept. 2014
Firstpage
1
Lastpage
2
Abstract
We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate the results of quantum efficiency measurements of nano-structured materials and bulks.
Keywords
elemental semiconductors; silicon; terahertz wave spectra; time resolved spectra; Si; bulk silicon; carrier multiplication efficiency; incident photon energy; nanostructured materials; optical-pump/terahertz-probe spectroscopy; photocurrent measurements; quantum efficiency enhancement; time resolved data; Conductivity; Optical pumping; Photonics; Physics; Semiconductor device measurement; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location
Tucson, AZ
Type
conf
DOI
10.1109/IRMMW-THz.2014.6956062
Filename
6956062
Link To Document