Two-dimensional modeling and simulation for dynamic sheath expansion during plasma immersion ion implantation

Author

Qin, Shu ; Yuanzhong Xhou ; Chan, Chung

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

27

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

766

Lastpage

771

Abstract

A pseudo two-dimensional (2-D) analytical model and a 2-D plasma simulator PDP2 code have been utilized to characterize ion-matrix sheath and dynamic sheath expansion during the plasma immersion ion implantation process. The pseudo 2-D model is very simple by involving two geometry factors and yields an acceptable accuracy under the current process conditions. Good agreement between the pseudo 2-D model and PDP2 simulation was observed

Keywords

ion implantation; plasma impurities; plasma materials processing; plasma sheaths; plasma simulation; 2D plasma simulator; PDP2 code; PDP2 simulation; dynamic sheath expansion; geometry factors; ion-matrix sheath; plasma immersion ion implantation; plasma immersion ion implantation process; process conditions; pseudo 2D model; pseudo two-dimensional analytical model; two-dimensional model; two-dimensional simulation; Analytical models; Implants; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Two dimensional displays;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.774681

Filename

774681