Transfer-matrix formulation of spontaneous emission noise of DFB semiconductor lasers

Author

Makino, Toshihiko

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

9

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

84

Lastpage

91

Abstract

A unified formulation of the spontaneous emission noise in semiconductor DFB (distributed feedback) lasers is presented by using a transfer-matrix approach. Analytical expressions for the noise power per unit frequency bandwidth below threshold and the spontaneous emission rate into the lasing mode are obtained based on the Green´s function method. Three DFB laser structures are analyzed: (1) a standard DFB structure with facet reflectivities, (2) a multisection DFB structure composed of n sections which models a phase-shifted DFB laser and a multielectrode (tunable) DFB laser, and (3) a periodic layered DFB structure which models a surface-emitting DFB laser. It is shown that the spontaneous emission noise of a complicated DFB laser structure can be calculated easily by the transfer matrix of each section of the structure and its derivative to frequency

Keywords

Green´s function methods; distributed feedback lasers; electron device noise; matrix algebra; semiconductor junction lasers; DFB laser structures; Green´s function method; distributed feedback semiconductor lasers; facet reflectivities; lasing mode; multisection DFB structure; noise power; periodic layered DFB structure; phase-shifted DFB laser; spontaneous emission noise; surface-emitting DFB laser; transfer-matrix approach; unified formulation; Distributed feedback devices; Frequency; Laser feedback; Laser modes; Laser noise; Periodic structures; Semiconductor device noise; Semiconductor lasers; Spontaneous emission; Surface emitting lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.64926

Filename

64926