Characterization and simulation of proton exchanged integrated optical modulators with various dielectric buffer layers

Author

Charczenko, Walter ; Weitzman, Peter S. ; Klotz, Holger ; Surette, Marc ; Dunn, John M. ; Mickelson, Alan R.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

9

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

92

Lastpage

100

Abstract

Fast and accurate numerical techniques are developed for calculating the optical depth of modulation of integrated optical devices with various dielectric buffer layers. The matrix effective refractive-index method is used in calculating the LiNbO₃ proton exchange single-channel optical mode parameters. An approximate technique for calculating electrode electric-field distributions as a function of various buffer layers is presented. Comparisons of computer simulations to experimental measurements performed on Mach-Zehnder modulators containing various buffer layers demonstrate that the numerical techniques are sufficiently accurate for computer-aided design use

Keywords

digital simulation; electro-optical devices; integrated optics; ion exchange; lithium compounds; optical modulation; refractive index; LiNbO₃; Mach-Zehnder modulators; approximate technique; computer simulations; computer-aided design; dielectric buffer layers; electrode electric-field distributions; integrated optical devices; matrix effective refractive-index method; numerical techniques; optical depth; proton exchange single-channel optical mode parameters; proton exchanged integrated optical modulators; Buffer layers; Computer simulation; Dielectric devices; Electrodes; Integrated optics; Optical buffering; Optical devices; Optical modulation; Optical refraction; Protons;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.64927

Filename

64927