• DocumentCode
    1528642
  • Title

    The stability and passivity of MOSFET device models that use nonreciprocal capacitive elements

  • Author

    Glasser, Lance A.

  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    738
  • Lastpage
    746
  • Abstract
    An examination is made of the activity and stability of circuits built from device models formed by a linear active or passive multiport resistor in parallel with a positive definite, but nonreciprocal, multiport capacitor. Numerical range methods are used to determine the maximum frequency of oscillation and maximum exponential growth rate of the solutions for both conservation of real power and conservation of complex power. Also examined are the stability and activity of these devices when a positive-definite multiport resistor is added in series. It is shown that with the inclusion of the resistor, the circuit becomes passive at high frequencies even if the capacitor is nonreciprocal. The implications of these results for MOSFET device modeling are discussed
  • Keywords
    insulated gate field effect transistors; semiconductor device models; stability; MOSFET device models; conductance matrix; multiport capacitor; multiport resistor; nonreciprocal capacitive elements; passivity; stability; Analog circuits; Capacitance; Capacitors; Circuit simulation; Circuit stability; Frequency; MOSFET circuits; Resistors; Superconducting transmission lines; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0098-4094
  • Type

    jour

  • DOI
    10.1109/31.55032
  • Filename
    55032