DocumentCode
1528840
Title
The semiconductor laser: a thirty-five-year perspective
Author
Holonyak, N., Jr.
Author_Institution
Electr. Eng. Res. Lab., Illinois Univ., Champaign, IL, USA
Volume
85
Issue
11
fYear
1997
fDate
11/1/1997 12:00:00 AM
Firstpage
1678
Lastpage
1693
Abstract
Starting in 1962 with GaAs and the alloy GaAsP, the prototype III-V alloy the semiconductor laser developed slowly from a pulse-operated simple p-n junction to a continuously operated (300-K) double heterojunction in 1970. Then, in 1977, in another metamorphosis, it became a quantum-well (QW) device of reduced dimensionality (two dimensional) and improved density of states and performance. The fact that the semiconductor laser is based on an ideal form of “lamp”, a p-n junction of potentially 100% quantum efficiency in conversion of electron-hole pairs to photons, gives it a built-in advantage over all other forms of lasers-all the indirectly excited lasers. Also, being a condensed system, it can be small-smaller than all other forms of lasers-and yet cover a great wavelength and power range, which continue to expand. Because of its third-layer form, a QW heterostructure (the product of more or less easily controlled epitaxial crystal growth) is amenable to modification by relatively simple processing operations such as impurity-induced layer disordering and now “wet” oxidation of Al-based layers, which makes possible a new generation of high-performance vertical-cavity surface emitting lasers (VCSELs). The VCSEL, with its oxide-defined high-Q flat cavity, reduced mode density, and approach now to instant “turn-on” (μA currents), indicates that semiconductor lasers may not become much better than VCSELs, even if there is a change (not certain) in form from two to one to zero dimensional (and, if so, to problems in uniformity and reproducibility). If the technologies of the high-brightness transparent-substrate light emitting diode (LED) and the VCSEL converge much more, it is likely that the VCSEL-LED will become an addressable array (a display), a projection television, or a low- or high-power lamp, perhaps eventually on a large “diameter” Si platform. The study of the semiconductor laser, the first practical QW device, is not complete, nor is its development, which is certain to continue
Keywords
laser cavity resonators; light emitting diodes; optical pumping; p-n junctions; quantum well lasers; semiconductor lasers; surface emitting lasers; 100% quantum efficiency; Al-based layers; GaAs; GaAsP; QW heterostructure; Si; VCSEL; continuously operated double heterojunction; electron-hole pairs; epitaxial crystal growth; high-brightness transparent-substrate light emitting diode; high-performance vertical-cavity surface emitting lasers; improved density of states; impurity-induced layer disordering; indirectly excited lasers; metamorphosis; oxide-defined high-Q flat cavity; power range; pulse-operated simple p-n junction; quantum-well laser device; reduced dimensionality; reduced mode density; semiconductor laser; third-layer form; wavelength range; Gallium arsenide; III-V semiconductor materials; Laser modes; Light emitting diodes; P-n junctions; Prototypes; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.649645
Filename
649645
Link To Document