Cryogenic low noise amplifier development for 67–116 GHz

Author

Kotiranta, Mikko ; Bruch, Daniel ; Leuther, A. ; Massler, Hermann ; Seelmann-Eggebert, Matthias ; Schlechtweg, Michael ; Ambacher, Oliver ; Turk, Sener ; Goliasch, Jens ; Schafer, Frank

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed using the 50 nm metamorphic high electron mobility transistor technology of Fraunhofer IAF. Both amplifiers have been measured on-wafer at room temperature and one of them additionally in a waveguide module at an ambient temperature of 18 K. The average gain and noise temperature in the band 75-110 GHz are 23 dB and 69 K, respectively, in the latter case.

Keywords

MMIC amplifiers; cryogenic electronics; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; Fraunhofer IAF; cryogenic low noise amplifier; frequency 67 GHz to 116 GHz; metamorphic high electron mobility transistor technology; monolithic microwave integrated circuit; size 50 nm; temperature 18 K; temperature 293 K to 298 K; temperature 69 K; waveguide module; Cryogenics; Gain; MMICs; Noise; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956175

Filename

6956175