1550-nm time-domain study of ErAs:GaAs photoconductive switches function of the erbium concentration

Author

Martin, Miquel ; Middendorf, J.R. ; Brown, E.R.

Author_Institution

Dept. of Phys., Wright State Univ., Dayton, OH, USA

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

We present the performance of ErAs:GaAs photoconductive antennas measured with a 1550-nm time-domain spectrometer. The effect of the erbium concentration is studied in terms of spectrum and dynamic range. A 1%- and 2%-Er ErAs:GaAs PC switch were tested and showed detected frequencies up to at least 2.5 and 4 THz, respectively, with a low-frequency dynamic range of ~50 and ~55 dB.

Keywords

erbium compounds; gallium arsenide; optical materials; optical switches; optical testing; photoconducting materials; photoconducting switches; time-domain analysis; ErAs:GaAs PC switch testing; ErAs:GaAs photoconductive antennas; ErAs:GaAs photoconductive switches; GaAs:ErAs; erbium concentration effect; frequency 2.5 THz to 4 THz; low-frequency dynamic range; spectrum range; time-domain spectrometer; time-domain study; wavelength -1550 nm; Antenna measurements; Antennas; Dynamic range; Erbium; Laser beams; Structural beams; Time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956181

Filename

6956181