• DocumentCode
    1529625
  • Title

    Doping effect on shift of threshold voltage of graphene-based field-effect transistors

  • Author

    Guo, Bo ; Fang, Lisheng ; Zhang, Boming ; Gong, J.R.

  • Author_Institution
    Dept. of Appl. Phys., Chongqing Univ., Chongqing, China
  • Volume
    47
  • Issue
    11
  • fYear
    2011
  • Firstpage
    663
  • Lastpage
    664
  • Abstract
    A method of controllable doping by ion irradiation in reduced graphene oxide (RGO) is presented, and the threshold voltage of the RGO-based field-effect transistor can be finely tuned in the range from more than 30 V to about -20 V using this approach. Evidence of doping was also provided by Raman spectroscopy and Fourier transform infrared spectroscopy.
  • Keywords
    Fourier transform spectra; Raman spectroscopy; field effect transistors; graphene; infrared spectra; semiconductor doping; C; Fourier transform infrared spectroscopy; Raman spectroscopy; controllable doping; doping effect; graphene-based field-effect transistor; ion irradiation; reduced graphene oxide; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.0770
  • Filename
    5779503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1529625