Performance Assessment of Nanoscale Field-Effect Diodes

We propose a new structure called a side-contacted field-effect diode (FED). The fabrication of this new structure is simple, and it offers good electrical characteristics. Furthermore, a comprehensive analysis of FEDs is presented. The effect of heavy-doping-induced band-gap narrowing on the performance of FEDs is investigated. Our results show that the calculated I_on/I_off ratio is at least two orders of magnitude larger than that obtained from models neglecting this effect. The figures of merit including intrinsic gate delay time, the energy-delay product, and the subthreshold slope have been studied. Our numerical investigations of the scaling of FEDs indicate that, in the nanometer regime, FEDs have a higher I_on/I_off ratio. The results demonstrate that FEDs are interesting candidates for future logic applications.