• DocumentCode
    1529954
  • Title

    Perpendicular anisotropy in a-CoGdZr films, induced by HDC applied during deposition

  • Author

    Shin, D.H. ; Niedoba, H. ; Suran, G.

  • Author_Institution
    Lab. Louis Neel, CNRS, Grenoble, France
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    1422
  • Lastpage
    1425
  • Abstract
    When amorphous Co95-xZr5Gdx films are prepared by RF sputtering in presence of a DC field applied parallel to the film plane, a perpendicular anisotropy Kp is obtained for 0<x<25 and an in-plane one Ku for x>28. A substrate holder with a specific configuration is used. Its´ interest Is explained in detail. The values of Kp and Ku are determined by the pressure of the sputter gas PAr. When 18<x<25 one obtains Q>1, for an optimal PAr. The results are explained by a spin reorientation process
  • Keywords
    amorphous magnetic materials; cobalt alloys; gadolinium alloys; magnetic thin films; perpendicular magnetic anisotropy; perpendicular magnetic recording; spin dynamics; sputter deposition; sputtered coatings; storage media; zirconium alloys; CoGdZr; DC field; RF sputtering; a-CoGdZr films; amorphous Co95-xZr5Gdx films; perpendicular anisotropy; spin reorientation process; sputter gas pressure; substrate holder; Amorphous materials; Anisotropic magnetoresistance; Fabrication; Helium; Magnetic anisotropy; Magnetic films; Plasma temperature; Sputtering; Substrates; Zirconium;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.950860
  • Filename
    950860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1529954