• DocumentCode
    153051
  • Title

    THz radiation emission from InPAs and GaInAs crystals

  • Author

    Wilke, Ingrid ; Dutta, Partha S. ; Slobodtchikov, Evgueni

  • Author_Institution
    Dept. of Phys., Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2014
  • fDate
    14-19 Sept. 2014
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    An experimental study on the emission of THz-radiation from InP1-xAsx and Ga1-xInxAs crystals is reported. The semiconductor materials were grown by a hybrid vertical Bridgman and gradient freezing directional solidification process. A directly diode pumped Ytterbium - and a conventional Titanium-Sapphire femtosecond laser oscillator were used to stimulate the emission of THz radiation from the semiconductor materials. Progress towards compact and cost-effective THz-radiation systems is discussed.
  • Keywords
    III-V semiconductors; freezing; gallium compounds; high-speed optical techniques; indium compounds; laser materials processing; optical fabrication; optical pumping; semiconductor growth; solidification; terahertz waves; Ga1-xInxAs; InP1-xAsx; diode pumped vtterbium; gallium indium arsenide crystals; gradient freezing directional solidification process; hybrid vertical Bridgman process; indium phosphide arsenide crystals; semiconductor material growth; terahertz radiation emission; titanium-sapphire femtosecond laser oscillator; Crystals; Laser excitation; Oscillators; Photonic band gap; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
  • Conference_Location
    Tucson, AZ
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2014.6956231
  • Filename
    6956231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=153051