• DocumentCode
    153058
  • Title

    On the power dependence of 1.5 μm excitation of low-temperature-grown GaAs photoconductive antennas

  • Author

    Jougataki, Kohei ; Tomiyasu, Yuki ; Hirao, Yuya ; Tominaga, Yoriko ; Kadoya, Yutaka

  • Author_Institution
    Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2014
  • fDate
    14-19 Sept. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The mechanism of the halfway power dependence Pn with 1<;n<;2 in the 1.5 μm excitation of low-temperature-grown GaAs was investigated and found to be well accounted for by a transition from linear to quadratic response.
  • Keywords
    III-V semiconductors; antennas; gallium arsenide; photoconducting devices; GaAs; halfway power dependence mechanism; low-temperature-grown photoconductive antennas; wavelength 1.5 mum; Absorption; Antennas; Detectors; Gallium arsenide; Measurement by laser beam; Photoconductivity; Principal component analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
  • Conference_Location
    Tucson, AZ
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2014.6956234
  • Filename
    6956234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=153058