• DocumentCode
    1530649
  • Title

    Evolutions of magnetic and structural properties of FeAlN thin films via N doping

  • Author

    Liu, Yi-Kuang ; Harris, Vincent G. ; Kryder, Mark H.

  • Author_Institution
    Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    1779
  • Lastpage
    1782
  • Abstract
    The effects of N doping on the magnetic and structural properties of a series of 100 nm FeAlN films sputtered in the presence of N2 partial pressures were investigated. Increasing N doping increased film resistivity but decreased Ms. Extended X-ray absorption fine structure spectra of the short-range atomic order in the Fe(Al) lattices directly indicated that the N went into octahedral sites of bcc Fe and fcc Fe in α-Fe and γ´-Fe4N phases, respectively, and triggered the order-disorder phase transition observed in X-ray θ-2θ diffraction spectra. Mild N doping decreased the grain size and reduced Hc. It also increased the local atomic disorder, which coincided with the maximal value of Ku and the in-plane anisotropic behaviors of as-deposited films
  • Keywords
    EXAFS; X-ray diffraction; aluminium compounds; coercive force; electrical resistivity; ferromagnetic materials; grain size; iron compounds; magnetic anisotropy; magnetic thin films; magnetisation; order-disorder transformations; short-range order; soft magnetic materials; sputtered coatings; EXAFS spectra; FeAlN; FeAlN thin film; N doping; X-ray diffraction; anisotropy; coercive force; electrical resistivity; grain size; magnetic properties; order-disorder phase transition; saturation magnetization; short-range order; soft ferromagnetic material; sputter deposition; structural properties; Conductivity; Doping; Electromagnetic wave absorption; Iron; Lattices; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.950966
  • Filename
    950966