Design and simulation of the terahertz extended interaction oscillator

Author

Wenxin Liu ; Zhaochuan Zhang ; Chao Zhao ; Xin Guo ; Yong Wang ; Ziqiang Yang

Author_Institution

Inst. of Electron., Beijing, China

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

The extended interaction oscillator (EIO) is regarded as a novel type of high power terahertz (THz) source, which has promising application prospects in radar, medical imaging etc. Up to now, CPI and other institutes have developed many types of EIO. For satisfying with the application request, the EIO with operation frequency exceeding 300GHz is designed and studied with three-dimensional particle-in-cell simulation at institute of electronics, Chinese Academy of Sciences (IECAS). The output characteristics including operation frequency versus FW parameters, output power versus beam voltage are studied. The results show one can obtain output peak power 240W@318GHz.

Keywords

digital simulation; submillimetre wave oscillators; terahertz wave devices; waveguides; CPI; EIO; FW parameter; IECAS; beam voltage; folded waveguide parameter; high power THz source; institute of electronics Chinese academy of sciences; terahertz extended interaction oscillator; three-dimensional particle-in-cell simulation; Couplings; Electron beams; Equivalent circuits; Integrated circuit modeling; Power generation; Solid modeling; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956251

Filename

6956251