A semi-coaxial TGV interposer for high frequency 3D system applications

Author

Rong Zeng ; Xiang Huang ; Hui, L.

Author_Institution

Inst. of Electron. Eng., Mianyang, China

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

1

Abstract

This article describes a semi-coaxial through glass via(TGV) interposer structure for high frequency three dimensional(3D) system applications. In order to overcome impedance mismatch in high frequency transition, a semi-coaxial structure is designed. The glass is 200 μm thick and the via´s diameter is 50 μm. Re-distribution layer (RDL) line to TGV transition structure is designed and simulated to estimate the loss and crosstalk. Simulation results shows that this structure has very good performance up to 35 GHz. The S11 is less than -30dB and S21 is more than -0.1dB. This TGV interposer can be used for 3D milimeter wave IC intergration.

Keywords

MMIC; crosstalk; glass; three-dimensional integrated circuits; vias; 3D milimeter wave IC integration; RDL line; crosstalk; high frequency 3D system; high frequency transition; impedance mismatch; redistribution layer; semicoaxial TGV interposer; semicoaxial structure; size 200 mum; size 50 mum; through glass via interposer structure; Glass; Impedance; Integrated circuits; Silicon; Simulation; Substrates; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956252

Filename

6956252