• DocumentCode
    1532856
  • Title

    Observation of quantum hall effect in Si-MOSFET´s by means of conventional and Josephson potentiometer systems

  • Author

    Yoshihiro, Kawahara ; Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C. ; Endo, Akira ; Murayama, Yuko ; Koyanagi, Mitsumasa ; Wakabayashi, J.-I. ; Kawaji, S.

  • Author_Institution
    Device Fundamentals Sect., Electrotech. Lab., Ibaraki, Japan
  • Issue
    3
  • fYear
    1986
  • Firstpage
    268
  • Lastpage
    271
  • Abstract
    Measurements of the quantized Hall resistance RH(i), i=4, 8, and 12, have been made for silicon metal-oxide semiconductor field-effect transistors under different experimental conditions T=0.5 to 1.4K and B=10.5 to 14 T, using conventional potentiometer and galvanometer systems. These values of RH(4) are in agreement with those obtained by means of a preliminary system of Josephson potentiometer and SQUID galvanometer to within a few parts in 107.
  • Keywords
    Josephson effect; electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; quantum Hall effect; silicon; superconducting junction devices; Josephson potentiometer; SQUID galvanometer; Si; Si MOSFET; electric resistance measurement;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.1986.6499208
  • Filename
    6499208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1532856