Studies of multiplication process of a novel image intensifier of an amplified metal-oxide-semiconductor imager overlaid with electron-bombarded amorphous silicon

Author

Taketoshi, Kazuhisa ; Andoh, Fumihiko

Author_Institution

Dept. of Electr. Eng., Kokushikan Univ., Tokyo, Japan

Volume

46

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1619

Lastpage

1622

Abstract

We studied the multiplication process of a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded amorphous silicon (a-Si), by Monte Carlo (MC) simulation. The electron bombardment gains (EB-gains) of MC simulation for acceleration voltages between 2 and 10 kV coincide well with the measured values. The threshold voltage of 2 kV is well explained in terms of Bethe´s electron beam energy losses of the Al and Si_xN_1-x layers. The penetration depth of an electron beam of 10 kV is 0.83 μm and supports an experimentally safe optimal target thickness (1.2-1.3 μm). The standard deviation of lateral spread is 2198 Å. The theoretical excess noise coefficient is 1.2 between 7 and 1.3 kV, which coincides exactly with the measured value

Keywords

MIS devices; Monte Carlo methods; electron bombarded semiconductor devices; image intensifiers; image sensors; semiconductor device noise; 2 to 10 kV; Al layer; Bethe electron beam energy loss; Monte Carlo simulation; Si; Si_xN_1-x layer; amplified MOS imager; electron bombarded amorphous silicon; electron bombardment gain; excess noise coefficient; image intensifier; lateral spread; multiplication; penetration depth; threshold voltage; Acceleration; Accelerometers; Ambient intelligence; Amorphous silicon; Electron beams; Energy loss; Gain measurement; Image intensifiers; Monte Carlo methods; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.777149

Filename

777149