InGaAsP–InP Square Microlasers With a Vertex Output Waveguide

Author

Che, Kai-Jun ; Lin, Jian-Dong ; Huang, Yong-Zhen ; Yang, Yue-De ; Xiao, Jin-Long ; Du, Yun

Author_Institution

State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China

Volume

22

Issue

18

fYear

2010

Firstpage

1370

Lastpage

1372

Abstract

InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO₂ and p-electrode Ti-Au metals. For a square microlaser with a side length of 30 μm and a 2-μm -wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 μm , respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 ^° at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO₂-Ti-Au, and SiO₂-Au are compared by FDTD simulations.

Keywords

III-V semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; optical waveguides; semiconductor lasers; silicon compounds; InGaAsP-InP; SiO₂; current 26 mA; current 86 mA; finite-difference time-domain; p-electrode; power 0.72 mW; square microlasers; square resonators; temperature 293 K to 298 K; vertex output waveguide; wavelength 2 mum; wavelength 30 mum; Etching; Finite difference methods; Gold; Indium phosphide; Insulation; Laser modes; Planar waveguides; Temperature; Time domain analysis; Waveguide lasers; Finite-difference time-domain (FDTD) simulation; InGaAsP–InP; semiconductor microlasers; square resonator;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2057417

Filename

5508354