240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

Author

Lahrichi, M. ; Glastre, G. ; Derouin, E. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Achouche, M.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

Volume

22

Issue

18

fYear

2010

Firstpage

1373

Lastpage

1375

Abstract

We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M=10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device noise; AlInAs-InGaAs; avalanche layer; back-side illuminated avalanche photodiodes; back-side illuminated planar junction; bit rate 10 Gbit/s; excess noise factor; gain-bandwidth product; optical transmission; photodiode responsivity; wavelength 1550 nm; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical noise; Signal to noise ratio; AlInAs; GaInAs; avalanche photodiode (APD); dark current; excess noise factor; gain-bandwidth product;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2057503

Filename

5508355