DocumentCode
1533310
Title
Statistical distribution of neutron semiconductor device degradation
Author
McKenzie, J.M.
Author_Institution
Sandia Labs., Albuquerque, NM, USA
Volume
21
Issue
5
fYear
1974
Firstpage
23
Lastpage
27
Abstract
The population of permanent neutron degradation of base current per unit neutron fluence is normally distributed. The standard deviation of the population is about 10% of the mean degradation. This information is used to estimate circuit failures after a neutron pulse.
Keywords
neutron effects; semiconductor device testing; statistical analysis; circuit failures; neutron pulse; neutron semiconductor device degradation; standard deviation; statistical distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1974.6499271
Filename
6499271
Link To Document