Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs

Author

Tiwari, P.K. ; Panda, C.R. ; Agarwal, Abhishek ; Sharma, Parmanand ; Jit, S.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

4

Issue

4

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

337

Lastpage

345

Abstract

A simple, yet efficient two-dimensional (2D) model for the doping-dependent subthreshold swing characteristics of symmetric double-gate (DG) MOSFETs has been presented. The 2D Poisson´s equation has been solved by using parabolic potential approximation method to obtain the 2D channel potential function of the device. A closed-form expression for the doping-dependent effective current conducting path distance (d_eff) measured with respect to the centre of the channel of the symmetric DG MOSFET has been presented. Finally, the closed-form expression of the conducting path distance parameter d_eff has been utilised to obtain the subthreshold swing model of the device. The validity of the proposed model has been shown by comparing the analytical results with numerical simulation data obtained by using the commercially available ATLAS™ device simulator.

Keywords

MOSFET; Poisson equation; semiconductor doping; 2D Poisson equation; 2D channel potential function; ATLAS device simulator; closed-form expression; doping-dependent subthreshold swing model; numerical simulation data; parabolic potential approximation method; symmetric double-gate MOSFET; two-dimensional model;

fLanguage

English

Journal_Title

Circuits, Devices & Systems, IET

Publisher

iet

ISSN

1751-858X

Type

jour

DOI

10.1049/iet-cds.2009.0201

Filename

5508702