• DocumentCode
    1534840
  • Title

    Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs

  • Author

    Chen, Chih-Hung ; Lee, Ryan ; Tan, Ge ; Chen, David C. ; Lei, Peiming ; Yeh, Chune-Sin

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
  • Volume
    59
  • Issue
    8
  • fYear
    2012
  • Firstpage
    2215
  • Lastpage
    2220
  • Abstract
    This paper presents the equivalent sheet resistance for the intrinsic channel thermal noise of sub-100-nm MOSFETs for the first time. This newly defined noise sheet resistance is particularly helpful when comparing the noise performance of devices in different technology nodes for low-noise applications. Experimental results for devices in 130-, 90-, and 65-nm CMOS technology nodes are demonstrated. Strategies for the development of future low-noise technologies are suggested.
  • Keywords
    MOSFET; equivalent circuits; semiconductor device noise; thermal noise; CMOS technology; MOSFET; equivalent sheet resistance; intrinsic channel thermal noise; intrinsic noise; size 130 nm; size 65 nm; size 90 nm; MOSFETs; Noise; Performance evaluation; Resistance; Thermal noise; Channel thermal noise; noise parameters; noise sheet resistance; sub-100-nm MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2198651
  • Filename
    6213536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1534840