Efficient optoelectronic mixing at Ka-band using a mode-locked laser

Author

Daryoush, A.S. ; Sato, K. ; Horikawa, K. ; Ogawa, H.

Author_Institution

NTT Wireless Syst. Lab., Kanagawa, Japan

Volume

9

Issue

8

fYear

1999

Firstpage

317

Lastpage

319

Abstract

The authors present optoelectronic mixing of data signals with a carrier signal in a mode-locked semiconductor laser diode. A long Fabry-Perot (FP) laser at 1.5 μm, which is monolithically integrated with an electro-absorption modulator, is mode-locked at 19.3 GHz through loss modulation. The gain section of the mode-locked laser is modulated by S-band signals. Modulation sidebands are observed in the optical domain as a result of mixing between the mode-locking and S-band communication signals. Optical up-conversion loss of 2.7 and 1.4 dB is measured for the LSB and USB. The measured spurious-free dynamic range is as high as 89 dB.Hz²3/.

Keywords

electro-optical modulation; electroabsorption; integrated optoelectronics; laser beam applications; laser mode locking; microwave mixers; microwave photonics; millimetre wave mixers; semiconductor lasers; 1.4 dB; 1.5 micron; 19.3 GHz; 2.7 dB; Ka-band; S-band signals; carrier signal; data signals; electro-absorption modulator; long Fabry-Perot laser; loss modulation; mode-locked laser; mode-locked semiconductor LD; optoelectronic mixing; semiconductor laser diode; Diode lasers; Dynamic range; Fabry-Perot; Laser mode locking; Loss measurement; Optical losses; Optical mixing; Optical modulation; Semiconductor lasers; Universal Serial Bus;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.779914

Filename

779914