• DocumentCode
    1535765
  • Title

    Modeling of Polysilicon Depletion Effect in Recessed-Channel MOSFETs

  • Author

    Kang, Yeonsung ; Kim, Heesang ; Lee, Jaeho ; Son, Younghwan ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol

  • Author_Institution
    Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
  • Volume
    30
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1371
  • Lastpage
    1373
  • Abstract
    The polysilicon depletion effect is one of the key factors that degrade MOSFETs´ performance. In this letter, a polysilicon depletion model for recessed-channel (RC) MOSFETs is presented. The model shows good agreement with numerical device simulation results. We also compare the polysilicon depletion effect of RC MOSFETs to that of planar MOSFETs.
  • Keywords
    MOSFET; semiconductor device models; numerical device simulation; polysilicon depletion effect; recessed-channel MOSFET; Device modeling; gate depletion; poly depletion effect; polysilicon depletion effect; recessed-channel (RC) MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034278
  • Filename
    5308346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535765