DocumentCode
1535782
Title
10W near-diffraction-limited peak pulsed power from Al-free, 0.98 μm-emitting phase-locked antiguided arrays
Author
Yang, H. ; Mawst, L.J. ; Nesnidal, M. ; Lopez, J. ; Bhattacharya, A. ; Botez, D.
Author_Institution
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume
33
Issue
2
fYear
1997
fDate
1/16/1997 12:00:00 AM
Firstpage
136
Lastpage
137
Abstract
10 W peak-pulsed power emitted in a beam pattern 2×diffraction limit (DL) is obtained from a 40-element, 200 μm-aperture Al-free phase-locked antiguided array (λ=0.98 μm). 60% of the power resides in the central lobe, and the external differential quantum efficiency is 54%, for 1 mm-long optimised facet-coated devices
Keywords
integrated optics; laser transitions; optical waveguides; semiconductor laser arrays; 0.98 micron; 10 W; 54 percent; Al-free arrays; central lobe; external differential quantum efficiency; near-diffraction-limited peak pulsed power; optimised facet-coated devices; phase-locked antiguided arrays; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970099
Filename
579430
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