• DocumentCode
    1535806
  • Title

    High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 μm surface emitting lasers

  • Author

    Genty, F. ; Almuneau, G. ; Chusseau, L. ; Boissier, G. ; Malzac, J.-P. ; Salet, P. ; Jacquet, J.

  • Author_Institution
    Centre d´´Electron. et de Micro-Optoelectronique, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    33
  • Issue
    2
  • fYear
    1997
  • fDate
    1/16/1997 12:00:00 AM
  • Firstpage
    140
  • Lastpage
    142
  • Abstract
    A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 μm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-2. Peak reflectivity up to 94% has been measured with only 11.5 periods
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser transitions; reflectivity; semiconductor lasers; surface emitting lasers; tellurium; 1.5 micron; AlAsSb-GaAsSb:Te,N-InP; Bragg mirror; Burstein-Moss shift; GaAsSb absorption; Te doping; VCSEL; high reflectivity mirror; lattice match; strong N doping; surface emitting lasers; vertical cavity SEL;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970112
  • Filename
    579438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535806