• DocumentCode
    1536101
  • Title

    Ga0.47In0.53As depletion mode MISFETs with negligible drain current drift

  • Author

    Renaud, Martin ; Boher, P. ; Schneider, Jurgen ; Barrier, J. ; Heyen, M. ; Schmitz, Darrel

  • Author_Institution
    Lab. d´Electron. et de Phys. Appliquee, Limeil Brevannes
  • Volume
    24
  • Issue
    12
  • fYear
    1988
  • fDate
    6/9/1988 12:00:00 AM
  • Firstpage
    750
  • Lastpage
    752
  • Abstract
    Ga0.47In0.53As depletion-mode metal insulator semiconductor field-effect transistors with a transconductance in the range 100-140 mS/mm and with no significant current drift (less than 3% in 30 hours) have been fabricated on epitaxial layers grown by MOCVD. This high performance has been achieved using an efficient passivation of the GaInAs surface which associates in situ native oxide removal by a hydrogen multipolar plasma and a Si3N4 film deposition
  • Keywords
    dielectric thin films; gallium arsenide; indium compounds; insulated gate field effect transistors; metal-insulator-semiconductor structures; passivation; semiconductor technology; silicon compounds; vapour phase epitaxial growth; Ga0.47In0.53As; GaInAs surface; MOCVD; MOVPE; Si3N4 film deposition; depletion mode MISFETs; epitaxial layers; fabrication; metal insulator semiconductor field-effect transistors; negligible drain current drift; passivation; semiconductors; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1536101