DocumentCode
1536376
Title
Photovoltaic Characterizations of Crisscrossed-Silicon-Nanorod Solar Cells
Author
Yang, Jung-Yen ; Liu, Chien-Wei ; Cheng, Chin-Lung ; Jeng, Jin-Tsong ; Dai, Bau-Tong ; Lin, Jian-Shian ; Chen, Kun-Cheng
Author_Institution
Nat. Nano Device Labs., Hsinchu, Taiwan
Volume
30
Issue
12
fYear
2009
Firstpage
1299
Lastpage
1301
Abstract
A comparative study on photovoltaic characterizations in crisscrossed-silicon-nanorod (CSNR) solar cells with an n-type-CSNR/intrinsic-CSNR/polycrystalline-silicon/p-type-Si(100)-stacked structure was demonstrated by means of the vapor-liquid-solid technique. Results reveal that an improved conversion efficiency of ~1.66% and an external quantum efficiency (EQE) of ~29% at 690 nm were obtained. The CSNR reflectance was lower than 2% for the 200-1100-nm wavelength range. By developing a proper growth time, the CSNR solar cell has a larger EQE. The mechanisms related to excellent light trapping and a larger EQE were mainly due to the CSNR microstructure.
Keywords
silicon; solar cells; Si; crisscrossed nanorod solar cells; external quantum efficiency; photovoltaic characterizations; vapor-liquid-solid technique; wavelength 200 nm to 1100 nm; External quantum efficiency (EQE); photovoltaic; silicon nanorods; solar cells;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2032132
Filename
5308465
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