Switching voltage transient protection schemes for high-current IGBT modules

Author

Chokhawala, Rahul S. ; Sobhani, Saed

Author_Institution

ABB Semicond. AG, Lenzburg, Switzerland

Volume

33

Issue

6

fYear

1997

Firstpage

1601

Lastpage

1610

Abstract

The emergence of high-current and faster switching insulated gate bipolar transistor (IGBT) modules has made it imperative for designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors. This paper discusses protection criteria for both normal switching operation and short-circuit operation and covers in detail some of the protection schemes that were designed to address these problems

Keywords

insulated gate bipolar transistors; power semiconductor switches; power system transients; protection; snubbers; switching; transients; RCD snubber; capacitive method; high-current IGBT modules; insulated gate bipolar transistor; normal switching operation; protection criteria; resistive method; resistor-capacitor diode; short-circuit operation; short-circuit safe operating area; switching safe operating area; switching voltage transient protection; voltage clamps; Capacitors; Circuit faults; Clamps; Fault currents; Inductance; Insulated gate bipolar transistors; Protection; Switches; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.649974

Filename

649974