• DocumentCode
    1537104
  • Title

    Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers

  • Author

    Bewley, W.W. ; Vurgaftman, Igor ; Bartolo, Robert E. ; Jurkovic, M.J. ; Felix, Christopher L. ; Meyer, Jerry R. ; Lee, H. ; Martinelli, Ramon U. ; Turner, G.W. ; Manfra, M.J.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    7
  • Issue
    2
  • fYear
    2001
  • Firstpage
    96
  • Lastpage
    101
  • Abstract
    The far-field characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are studied as a function of etch depth, stripe width, and optical pumping intensity. Whereas near-diffraction-limited output is obtained for 50 μm stripes at ten times threshold, the beam quality degrades rapidly when either the stripe width or the pump intensity is increased. A key finding is that most of the degradation may be attributed to the onset of Fabry-Perot-like lasing modes that propagate along the direct path normal to the facets. We further show that these parasitic modes may be effectively eliminated by using ion-bombardment to create angled virtual mesas surrounded by loss regions. The bombarded structures show substantial improvement of the beam quality for wide pump stripes and high pump intensities, although in this first demonstration the efficiency decrease was greater than expected
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; ion beam effects; laser beams; optical pumping; quantum well lasers; sputter etching; α-DFB lasers; 50 mum; AlAs0.08Sb0.92-GaSb; Fabry-Perot-like lasing modes; GaSb/InAs/AlSb quantum wells; InAs-GaSb-InAs-AlSb; W active regions; angled virtual mesas; beam quality limitations; bombarded structures; efficiency decrease; etch depth; far-field characteristics; ion-bombardment; loss regions; mid-infrared angled-grating distributed-feedback lasers; near-diffraction-limited output; optical pumping intensity; parasitic modes; stripe width; Degradation; Diffraction gratings; Etching; Laboratories; Laser beams; Laser excitation; Laser feedback; Optical pumping; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.954116
  • Filename
    954116