DocumentCode
1537104
Title
Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers
Author
Bewley, W.W. ; Vurgaftman, Igor ; Bartolo, Robert E. ; Jurkovic, M.J. ; Felix, Christopher L. ; Meyer, Jerry R. ; Lee, H. ; Martinelli, Ramon U. ; Turner, G.W. ; Manfra, M.J.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
7
Issue
2
fYear
2001
Firstpage
96
Lastpage
101
Abstract
The far-field characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are studied as a function of etch depth, stripe width, and optical pumping intensity. Whereas near-diffraction-limited output is obtained for 50 μm stripes at ten times threshold, the beam quality degrades rapidly when either the stripe width or the pump intensity is increased. A key finding is that most of the degradation may be attributed to the onset of Fabry-Perot-like lasing modes that propagate along the direct path normal to the facets. We further show that these parasitic modes may be effectively eliminated by using ion-bombardment to create angled virtual mesas surrounded by loss regions. The bombarded structures show substantial improvement of the beam quality for wide pump stripes and high pump intensities, although in this first demonstration the efficiency decrease was greater than expected
Keywords
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; ion beam effects; laser beams; optical pumping; quantum well lasers; sputter etching; α-DFB lasers; 50 mum; AlAs0.08Sb0.92-GaSb; Fabry-Perot-like lasing modes; GaSb/InAs/AlSb quantum wells; InAs-GaSb-InAs-AlSb; W active regions; angled virtual mesas; beam quality limitations; bombarded structures; efficiency decrease; etch depth; far-field characteristics; ion-bombardment; loss regions; mid-infrared angled-grating distributed-feedback lasers; near-diffraction-limited output; optical pumping intensity; parasitic modes; stripe width; Degradation; Diffraction gratings; Etching; Laboratories; Laser beams; Laser excitation; Laser feedback; Optical pumping; Pump lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.954116
Filename
954116
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