Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Author

Ma, Tiezhong ; Campbell, Stephen A. ; Smith, Ryan ; Hoilien, Noel ; He, Boyong ; Gladfelter, Wayne L. ; Hobbs, Christopher ; Buchanan, Doug ; Taylor, Charles ; Gribelyuk, Michael ; Tiner, Mike ; Coppel, Matthew ; Lee, Jang Jung

Author_Institution

Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

48

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

2348

Lastpage

2356

Abstract

The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low inversion layer mobility. The amorphous interfacial layer is compositionally graded and contains a high concentration of Si-Ti bonds. In contrast, ZrO₂ and HfO ₂ form well defined oxynitride interfacial layers and a good interface with silicon with much less fixed charge. The electron inversion layer mobility for an HfO₂/SiO_xN_y/Si stack appears comparable to that of a conventional SiO₂/Si interface

Keywords

CVD coatings; electron mobility; hafnium compounds; insulating thin films; inversion layers; permittivity; titanium compounds; zirconium compounds; Group IVB metal oxide thin film; HfO₂; TiO₂; ZrO₂; anhydrous metal nitrate precursor; chemical vapor deposition; electrical characteristics; electron inversion layer mobility; fixed charge density; high permittivity gate insulator; interfacial layer; Dielectrics and electrical insulation; FETs; Hafnium oxide; Helium; Metal-insulator structures; Permittivity; Production; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.954476

Filename

954476