Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

Author

Navarro, Carlos ; Rodriguez, Noel ; Ohata, Akiko ; Gamiz, Francisco ; Andrieu, François ; Fenouillet-Beranger, Claire ; Faynot, Olivier ; Cristoloveanu, Sorin

Author_Institution

Dept. of Electron., Univ. of Granada, Granada, Spain

Volume

33

Issue

8

fYear

2012

Firstpage

1102

Lastpage

1104

Abstract

A novel technique for the accurate carrier mobility evaluation in ultrathin fully depleted SOI-MOSFETs is proposed. The mobility representation, obtained from the combination of Poisson-Schrödinger numerical simulations and split C(V) experimental results, discloses the mobility dependence on the effective field by accounting for the actual electric field and carrier profiles in the body of the device. As example of this technique, we show that the apparent larger mobility enhancement, due to back-gate bias, observed in thin-BOX transistors with respect to thick-BOX devices, is related to an electric field reduction rather than other technological factors.

Keywords

MOSFET; carrier mobility; electric fields; numerical analysis; silicon-on-insulator; FDSOI transistors; Poisson-Schrödinger numerical simulations; back-gate bias; carrier mobility evaluation; electric field; electric field reduction; mobility dependence; mobility representation; multibranch mobility analysis; thick-BOX devices; thin-BOX transistors; ultrathin fully depleted SOI-MOSFET; Approximation methods; Electron mobility; Logic gates; MOSFETs; Silicon; Effective field; SOI-MOSFETs; mobility; split $C(V)$; ultrathin SOI; universal mobility;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2198193

Filename

6216400