DocumentCode
1538820
Title
Model for carrier capture and escape in multiquantum-well lasers: determination of effective capture time and differential gain
Author
Plyavenek, A.G. ; Lyubarskii, A.V.
Author_Institution
Inst. of Radio Eng., Electron. & Autom., Acad. of Sci., Moscow, Russia
Volume
33
Issue
5
fYear
1997
fDate
2/27/1997 12:00:00 AM
Firstpage
392
Lastpage
393
Abstract
A new model that includes the effects of band mixing, strain, space charge, impurity doping, 3D carrier reflections at QW boundaries and intersubband transitions is proposed to determine effective carrier capture time and differential gain in multiquantum-well (MQW) lasers. Results of numerical calculations of these dynamic parameters for 1.3 μm strained InGaAsP/InP MQW lasers are presented
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor device models; semiconductor doping; space-charge-limited conduction; 1.3 micrometre; 3D carrier reflections; III-V semiconductors; InGaAsP-InP; QW boundaries; band mixing; carrier capture; carrier escape; differential gain; dynamic parameters; effective capture time; effective carrier capture time; impurity doping; intersubband transitions; multiquantum-well lasers; space charge;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970245
Filename
581042
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