Electronic cooling in Nb/AlO/sub x//Al/AlO/sub x//Nb double tunnel junctions

Author

Capogna, L. ; Burnell, G. ; Blamire, M.G.

Author_Institution

Dipartimento di Fisica, Salerno Univ., Italy

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

2415

Lastpage

2418

Abstract

Several recent papers have predicted the feasibility of superconducting tunnel junction-based electronic cryocooler devices operating in the temperature range 0.1-4 K. We have extended previous work in stacked Nb/AlO/sub x/ devices to investigate the nonequilibrium effects in them and to examine the influence of barrier conductance and layer thickness on the electronic cooling achievable by this technique. We have also analysed the maximum cooling possible with junctions of our present conductance.

Keywords

aluminium; aluminium compounds; cooling; niobium; superconducting devices; superconducting junction devices; superconductive tunnelling; 0.1 to 4 K; Nb-AlO-Al-AlO-Nb; Nb/AlO/sub x//Al/AlO/sub x//Nb double tunnel junction; SINIS junction; barrier conductance; electronic cooling; layer thicknes; nonequilibrium effects; stacked superconducting cryocooler device; Artificial intelligence; Electrodes; Electronics cooling; Josephson junctions; Niobium; Physics; Superconducting epitaxial layers; Temperature distribution; Vacuum systems; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.621727

Filename

621727