• DocumentCode
    1539573
  • Title

    Exponential expansion for field computation and capacitance extraction

  • Author

    Pham, Hoan H. ; Nathan, Arokia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    48
  • Issue
    10
  • fYear
    2001
  • fDate
    10/1/2001 12:00:00 AM
  • Firstpage
    1191
  • Lastpage
    1197
  • Abstract
    We report a new numerical technique based on the exponential expansion of the Green´s function 1/r for accurate and rapid computation of the three-dimensional potential field, its gradient, and the charge density distribution needed for capacitance extraction in multiple-dielectric-multiconductor systems. The exponential expansion provides a computational efficient alternative to the commonly used technique based on multipole expansion of spherical harmonics. With exponential expansion, the memory requirement is independent of the desired degree of accuracy and different forms of parallelism are available for both remotely distributed networks and closely coupled parallel systems. These features permit large-scale simulation, involving panel (element) count in the range of a few hundred thousand to several million, needed for extraction of the parasitic coupling capacitance in VLSI interconnects, including large-area amorphous silicon electronics, as well as for analysis of electrostatic interaction in micro-electro-mechanical systems (MEMS)
  • Keywords
    Green´s function methods; VLSI; capacitance; electric charge; electric fields; integrated circuit interconnections; micromechanical devices; numerical analysis; 3D potential field; Green function; MEMS; Si; VLSI interconnects; capacitance extraction; charge density distribution; closely coupled parallel systems; electrostatic analysis; electrostatic interaction; exponential expansion; field computation; field gradient; large-area amorphous Si electronics; large-scale simulation; micro-electro-mechanical systems; multiple-dielectric-multiconductor systems; numerical technique; parasitic coupling capacitance; remotely distributed networks; three-dimensional potential field; Amorphous silicon; Analytical models; Computational efficiency; Computational modeling; Distributed computing; Green´s function methods; Large-scale systems; Parallel processing; Parasitic capacitance; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1057-7122
  • Type

    jour

  • DOI
    10.1109/81.956013
  • Filename
    956013