• DocumentCode
    1539845
  • Title

    CW MM-wave GaAs TUNNETT diode

  • Author

    Pobl, M. ; Dalle, C. ; Freuer, J. ; Harth, W.

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektron., Tech. Univ. Munchen, West Germany
  • Volume
    26
  • Issue
    18
  • fYear
    1990
  • Firstpage
    1540
  • Lastpage
    1542
  • Abstract
    GaAs single-drift TUNNETT diodes have been grown by MBE. For the first time CW-output power has been achieved in the V abd W-bands. The best performance achieved is 25 mW associated with a conversion efficiency of 2.8% at 70 GHz. Good agreement between experimental findings and theoretical predictions obtained by means of a drift-diffusion model is demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; solid-state microwave devices; transit time devices; tunnel diodes; 2.8 percent; 25 mW; 70 GHz; EHF; GaAs; III-V semiconductor; MBE; TUNNETT diode; V-band; W-bands; single drift diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900989
  • Filename
    58143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1539845