DocumentCode
1540059
Title
Matrix-addressed 4*4 spatial light modulator using the quantum confined Stark effect in GaAs/AlGaAs quantum wells
Author
McIlvaney, K. ; Marsh, John H. ; Roberts, Jeffrey S. ; Button, C.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
26
Issue
20
fYear
1990
Firstpage
1691
Lastpage
1693
Abstract
The operation of a matrix-addressed GaAs quantum well modulator utilising the quantum confined Stark effect is described. The performance of the array was determined by limitations imposed by the electrical circuit and by the uniformity of the quantum well material. Individual modulators gave a modulation depth of 8.9 dB at the optimum working wavelength of 837 nm. In an array configuration the modulation depth dropped to 6.2 dB at 838.1 nm.
Keywords
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; matrix algebra; optical modulation; optical waveguide components; semiconductor devices; semiconductor quantum wells; 837 nm; 838.1 nm; GaAs-AlGaAs; array configuration; array performance; electrical circuit; matrix-addressed GaAs quantum well modulator; modulation depth; optimum working wavelength; quantum confined Stark effect; spatial light modulator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901081
Filename
58183
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