Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

Author

Martin-Martinez, J. ; Diaz, J. ; Rodriguez, Roberto ; Nafria, M. ; Aymerich, X. ; Roca, E. ; Fernandez, F.V. ; Rubio, Albert

Author_Institution

Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Bellaterra, Spain

fYear

2014

fDate

Sept. 29 2014-Oct. 1 2014

Firstpage

1

Lastpage

6

Abstract

A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate the RTN-related variation of the device drain current. The RTN parameters obtained from experimental traces are used to simulate the impact of RTN in the drain current of pMOS transistors in SRAM voltage sense amplifiers. The results show that RTN can lead to read errors of the stored data.

Keywords

MOSFET; SRAM chips; amplifiers; integrated circuit reliability; random noise; SRAM sense amplifiers; device drain current; pMOS transistors; random telegraph noise; voltage sense amplifiers; CMOS integrated circuits; Fluctuations; Histograms; MOSFET; Noise; Noise measurement; Threshold voltage; CMOS; Random Telegraph Noise; characterization; parameter extraction; reliability; sense amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

CMOS Variability (VARI), 2014 5th European Workshop on

Conference_Location

Palma de Mallorca

Type

conf

DOI

10.1109/VARI.2014.6957088

Filename

6957088