• DocumentCode
    1540244
  • Title

    PbS/PbSrS multi-quantum well laser emitting in the mid-infrared wavelength region

  • Author

    Takahashi, S. ; Koguchi, N. ; Chikyow, T. ; Kiyosawa, T. ; Fujiwara, J. ; Yoshihara, K.

  • Author_Institution
    Nat. Res. Inst. for Metals, Ibaraki, Japan
  • Volume
    26
  • Issue
    20
  • fYear
    1990
  • Firstpage
    1715
  • Lastpage
    1716
  • Abstract
    A multi-quantum well laser composed of PbS wells separated by Pb0.94Sr0.06S barriers was made by MBE on PbS substrates. Lasing action was confirmed at 15-135 K, where the emission wavelength was 3.6-3.1 mu m.
  • Keywords
    IV-VI semiconductors; lead compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; strontium compounds; 15 to 135 K; 3.1 to 3.6 micron; IV-VI semiconductors; MBE; PbS; PbS-Pb 1-xSr xS; emission wavelength; lasing action; mid-infrared wavelength region; multi-quantum well laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901095
  • Filename
    58197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540244