DocumentCode
1540649
Title
Stress-induced leakage current (SILC) and oxide breakdown: are they from the same oxide traps?
Author
Pantisano, Luigi ; Cheung, Kin P.
Author_Institution
IMEC, Leuven, Belgium
Volume
1
Issue
2
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
109
Lastpage
112
Abstract
Many research groups have used stress-induced leakage current SILC as a mean to measure the oxide traps (defects) buildup in the oxide film during electrical stress. It is commonly believed that these very same traps will lead to oxide breakdown when their density reaches a critical value. We studied the annealing kinetic of SILC as well as, the oxide breakdown distribution and found that they are quite different. Our result casts serious doubt on the validity of the popular assumption
Keywords
MOSFET; interface states; leakage currents; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; MOSFETs; SILC; Si-SiO2; annealing kinetic; electrical stress; heat treatment; oxide breakdown distribution; oxide traps buildup; stress-induced leakage current; Current measurement; Density measurement; Electric breakdown; Electron traps; Kinetic theory; Lead compounds; Leakage current; MOSFETs; Silicon; Stress measurement;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/7298.956704
Filename
956704
Link To Document