High-T/sub c/ superconducting step-edge junction on sapphire fabricated by non-etching technique

Author

Mashtakov, A.D. ; Ovsyannikov, G.A. ; Borisenko, I.V. ; Constantinyan, K.Y. ; Kotelyanskii, I.M. ; Erts, D.

Author_Institution

Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

3001

Lastpage

3004

Abstract

We have produced step-edge Josephson junctions on steps in an epitaxially grown CeO/sub 2/ layer on r-cut sapphire. The epitaxial CeO/sub 2/ layer is deposited at high temperature through a MgO/CeO/sub 2/ micromask. The optimum orientation of the step flank (FS) for grain boundary junction was determined on the basis of known experimental data of YBa/sub 2/Cu/sub 3/O/sub x/ (YBCO) film growth on tilted substrates and from analyses of bicrystal grain boundaries formed in YBCO films along the boundary between the FS and planar substrate. Atomic force microscopy (AFM) observations of the steps in which the FS was parallel to the [110]CeO/sub 2/ plane show that the slope angles is in a range from 50/spl deg/ to 70/spl deg/ that correspond to [111] and (221)CeO/sub 2/ crystallographic planes. The results of dc and microwave measurements of obtained high-T/sub c/ step-edge junction are presented.

Keywords

Josephson effect; atomic force microscopy; barium compounds; grain boundaries; high-temperature superconductors; superconducting thin films; yttrium compounds; Al/sub 2/O/sub 3/; CeO/sub 2/; CeO/sub 2/ epitaxial buffer layer; MgO/CeO/sub 2/ micromask; YBa/sub 2/Cu/sub 3/O; YBa/sub 2/Cu/sub 3/O/sub x/ thin film; atomic force microscopy; fabrication; grain boundary; high-T/sub c/ superconductor; sapphire substrate; step edge Josephson junction; Atomic force microscopy; Crystallography; Grain boundaries; High temperature superconductors; Josephson junctions; Lattices; Substrates; Superconducting epitaxial layers; Superconducting films; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783660

Filename

783660