Radiation damage in silicon detectors for high-energy physics experiments

Author

Bruzzi, Mara

Author_Institution

Dipartimento di Energetica, Ist. Nazionale di Fisica Nucl., Rome, Italy

Volume

48

Issue

4

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

960

Lastpage

971

Abstract

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider

Keywords

deep levels; defect states; leakage currents; radiation effects; silicon radiation detectors; Large Hadron Collider; Si; high-energy physics community; high-energy physics experiments; hostile radiation environment; microstrip detectors; operational parameters; pixel detectors; principal radiation hardening technologies; radiation damage; radiation-induced microscopic disorder; silicon detectors; Collision mitigation; Face detection; Implants; Large Hadron Collider; Lattices; Microstrip; Neutrons; Physics; Radiation detectors; Silicon radiation detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.958706

Filename

958706